HIGH STATISTICAL VARIATION OF STATIC RANDOM ACCESS MEMORY (SRAM) CELL BY NANO-TRANSISTORS IN COMBINATION WITH HIGH DENSITY CAUSES SOME MEMORY PERFORMANCE PROBLEMS.THEREFORE, PRESENTING AN ACCURATE STATISTICAL MODEL IS ONE OF THE KEY ISSUES IN DESIGNING OF SRAM MEMORY. THIS ARTICLE ANALYZES SENSITIVITY OF STATIC NOISE MARGIN (SNM) WITH DIFFERENT STATISTICAL VARIATIONS IN 6-TRANSISTORS (6T) AND 8-TRANSISTORS (8T) SRAM CELLS AND COMPARES stability OF 6T AND 8T SRAM TRANSISTOR CELLS. THIS ARTICLE EXAMINES THE EFFECT OF FOUR SAMPLES OF DIFFERENT VARIATIONS ON THE STATISTICAL stability OF 6T AND 8T CELLS INCLUDING: 1- THRESHOLD VOLTAGE VARIATIONS, 2- SUPPLY VOLTAGE VARIATIONS, 3- VARIATIONS IN WIDTH AND LENGTH OF THE DRIVER TRANSISTORS AND 4- WORD LINE VOLTAGE VARIATIONS. IN ALL THE EXAMINED VARIATIONS, IN 8T SRAM CELL, THE SNM WAS HIGHER THAN THE 6T SRAM CELL.